for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 240 linear & power amplifiers - smt hmc457qs16g / 457qs16ge ingap hbt 1 watt power amplifier, 1.7 - 2.2 ghz v03.0907 general description features functional diagram the hmc457qs16g & HMC457QS16GE are high dynamic range gaas ingap heterojunction bipolar transistor (hbt) 1 watt mmic power ampli ers operating between 1.7 and 2.2 ghz. packaged in a miniature 16 lead qsop plastic package, the ampli er gain is typically 27 db from 1.7 to 2.0 ghz and 25 db from 2.0 to 2.2 ghz. utilizing a minimum number of external components, the ampli er output ip3 can be optimized to +45 dbm. the power control (vpd) can be used for full power down or rf output power/ current control. the high output ip3 and pae make the hmc457qs16g & HMC457QS16GE ideal power ampli ers for cellular/3g base station & repeater applications. output ip3: +46 dbm gain: 27 db @ 1900 mhz 48% pae @ +32 dbm pout +25 dbm w-cdma channel power @ -50 dbc acpr integrated power control (vpd) qsop16g smt package: 29.4 mm 2 included in the hmc-dk002 designers kit electrical speci cations, t a = +25c, vs= +5v, vpd = +5v, vbias = +5v [1] typical applications the hmc457qs16g / HMC457QS16GE is ideal for applications requiring a high dynamic range ampli er: ? cdma & w-cdma ? gsm, gprs & edge ? base stations & repeaters parameter min. typ. max. min. typ. max. units frequency range 1710 - 1990 2010 - 2170 mhz gain 24 27 22 25 db gain variation over temperature 0.025 0.035 0.025 0.035 db / c in put retur n los s 11 11 d b output return loss 8 5 db output power for 1db compression (p1db) 26 29 27.5 30.5 dbm saturated output power (psat) 32.5 32 dbm output third order intercept (ip3) [2] 42 45 42 45 dbm noise figure 6 5 db supply current (icq) 500 500 ma control current (ipd) 4 4 ma bias current (vbias) 10 10 ma [1] speci cations and data re ect hmc457qs16g measured using the respective application circuits for each designated frequenc y band found herein. contact the hmc applications group for assistance in optimizing performance for your application. [2] two-tone output power of +15 dbm per tone, 1 mhz spacing.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 241 input return loss vs. temperature @ 1900 mhz output return loss vs. temperature @ 1900 mhz broadband gain & return loss @ 1900 mhz gain vs. temperature @ 1900 mhz -20 -15 -10 -5 0 5 10 15 20 25 30 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 s21 s11 s22 response (db) frequency (ghz) 10 12 14 16 18 20 22 24 26 28 30 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 +25c +85c -40c gain (db) frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 +25c +85c -40c return loss (db) frequency (ghz) -15 -12 -9 -6 -3 0 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 +25c +85c -40c return loss (db) frequency (ghz) pldb vs. temperature @ 1900 mhz psat vs. temperature @ 1900 mhz 20 22 24 26 28 30 32 34 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 20 22 24 26 28 30 32 34 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 +25 c +85 c -40 c psat (dbm) frequency (ghz) hmc457qs16g / 457qs16ge ingap hbt 1 watt power amplifier, 1.7 - 2.2 ghz v03.0907
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 242 linear & power amplifiers - smt output ip3 vs. temperature @ 1900 mhz gain, power & ip3 vs. supply current @ 1900 mhz* gain, power & ip3 vs. supply voltage @ 1900 mhz power compression @ 1900 mhz * icq is controlled by varying vpd. noise figure vs. temperature @ 1900 mhz acpr vs. supply voltage @ 1960 mhz cdma 2000, 9 channels forward 34 36 38 40 42 44 46 48 50 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 +25 c +85 c -40 c oip3 (dbm) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 1.6 1.7 1.8 1.9 2 2.1 +25 c +85 c -40 c noise figure (db) frequency (ghz) 5 10 15 20 25 30 35 40 45 50 4.5 4.75 5 5.25 5.5 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vs (vdc) 5 10 15 20 25 30 35 40 45 50 440 480 520 560 600 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) icq (ma) 5v -90 -80 -70 -60 -50 -40 -30 12 14 16 18 20 22 24 26 28 acpr (dbc) channel power (dbm) source acpr cdma2000 frequency: 1.96 ghz integration bw: 1.228 mhz forward link, sr1, 9 channels 5.5v 4.5v 0 5 10 15 20 25 30 35 40 45 50 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) hmc457qs16g / 457qs16ge ingap hbt 1 watt power amplifier, 1.7 - 2.2 ghz v03.0907
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 243 gain vs. temperature @ 2100 mhz output return loss vs. temperature @ 2100 mhz input return loss vs. temperature @ 2100 mhz broadband gain and return loss @ 2100 mhz -20 -15 -10 -5 0 5 10 15 20 25 30 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 s11 s21 s22 response (db) frequency (ghz) 14 16 18 20 22 24 26 28 30 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 +25c +85c -40c gain (db) frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 +25c +85c -40c return loss (db) frequency (ghz) -10 -8 -6 -4 -2 0 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 +25c +85c -40c return loss (db) frequency (ghz) psat vs. temperature @ 2100 mhz pldb vs. temperature @ 2100 mhz 20 22 24 26 28 30 32 34 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 20 22 24 26 28 30 32 34 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 +25 c +85 c -40 c psat (dbm) frequency (ghz) hmc457qs16g / 457qs16ge ingap hbt 1 watt power amplifier, 1.7 - 2.2 ghz v03.0907
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 244 linear & power amplifiers - smt output ip3 vs. temperature @ 2100 mhz gain, power & ip3 vs. supply current @ 2100 mhz* gain, power & ip3 vs. supply voltage @ 2100 mhz noise figure vs. temperature @ 2100 mhz 0 1 2 3 4 5 6 7 8 9 10 1.9 2 2.1 2.2 2.3 +25 c +85 c -40 c noise figure (db) frequency (ghz) 5 10 15 20 25 30 35 40 45 50 4.5 4.75 5 5.25 5.5 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vs (vdc) 5 10 15 20 25 30 35 40 45 50 440 480 520 560 600 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) icq (ma) *icq is controlled by varying vpd power compression @ 2100 mhz acpr vs. supply voltage @ 2140 mhz w-cdma, 64 dpch (uplink) -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 12 14 16 18 20 22 24 26 28 acpr (dbc) channel power (dbm) source acpr w-cdma frequency: 2.14 ghz integration bw: 3.84 mhz 64 dpch 5v 4.5v 5.5v 0 5 10 15 20 25 30 35 40 45 50 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 34 36 38 40 42 44 46 48 50 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 +25 c +85 c -40 c oip3 (dbm) frequency (ghz) hmc457qs16g / 457qs16ge ingap hbt 1 watt power amplifier, 1.7 - 2.2 ghz v03.0907
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 245 absolute maximum ratings collector bias voltage (vcc) +6 vdc control voltage (vpd) +5.4 vdc rf input power (rfin)(vs = vpd = +5 vdc) +15 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 42.9 mw/c above 85 c) 2.78 w thermal resistance (junction to ground paddle) 23.3 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c power dissipation 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -10-8-6-4-20246810 power dissipation (w) input power (dbm) max pdiss @ +85c 2100 mhz 1900 mhz vs (v) icq (ma) 4.5 400 5.0 510 5.5 620 typical supply current vs. supply voltage hmc457qs16g / 457qs16ge ingap hbt 1 watt power amplifier, 1.7 - 2.2 ghz v03.0907 electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 246 linear & power amplifiers - smt outline drawing notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads and ground paddle must be soldered to pcb rf ground. hmc457qs16g / 457qs16ge ingap hbt 1 watt power amplifier, 1.7 - 2.2 ghz v03.0907 part number package body material lead finish msl rating package marking [3] hmc457qs16g low stress injection molded plastic sn/pb solder msl1 [1] h457 xxxx HMC457QS16GE rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h457 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 247 pin number function description interface schematic 1 vcc power supply voltage for the rst ampli er stage. external bypass capacitors are required as shown in the application schematic. 2, 4, 5, 7, 9, 16 gnd ground: backside of package has exposed metal ground slug that must also be connected to rf/dc ground. vias under the device are required. 3 vbias power supply for bias circuit 6 rfin this pin is ac coupled and matched to 50 ohms 8 vpd power control pin. for maximum power, this pin should be connected to +5v. a higher voltage is not recommended. for lower idle current, this voltage can be reduced. 10 - 15 rfout rf output and dc bias for the output stage. pin descriptions hmc457qs16g / 457qs16ge ingap hbt 1 watt power amplifier, 1.7 - 2.2 ghz v03.0907
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 248 linear & power amplifiers - smt 1900 & 2100 mhz application circuit recommended component values 1900 mhz 2100 mhz c1 - c4 100 pf 100 pf c5, c6 1000 pf 1000 pf c7 2.2 f 2.2 f c8 33 pf 33 pf c9 3.9 pf 2.7 pf l1, l2 3.9 nh 3.9 nh r1 160 ohm 160 ohm tl1 tl2 impedance 50 ohm 50 ohm physical length 0.170 0.080 electrical length 20 9 pcb material: 10 mil rogers 4350, er = 3.48 this circuit was used to specify the performance for 1900 & 2100 mhz operation. contact the hmc applications group for assistance in optimizing performance for your application. hmc457qs16g / 457qs16ge ingap hbt 1 watt power amplifier, 1.7 - 2.2 ghz v03.0907
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 249 evaluation pcb the circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 106043-1900, 110171-2100 [1] item description j1, j2 pcb mount sma connector j3, j4 2 mm dc header c1 - c4 100 pf capacitor, 0402 pkg. c5, c6 1000 pf capacitor, 0603 pkg. c7 2.2 f capacitor, tantalum c8 33 pf capacitor, 0402 pkg. c9 3.9 pf capacitor, 0603 pkg. - 1900 mhz c9 2.7 pf capacitor, 0603 pkg. - 2100 mhz l1, l2 3.9 nh inductor, 0603 pkg. r1 160 ohm resistor, 0603 pkg. u1 hmc457qs16g / HMC457QS16GE pcb [2] 109585 evaluation pcb, 10 mils [1] reference one of these numbers when ordering complete evaluation pcb depending on frequency of operation. [2] circuit board material: rogers 4350, er = 3.48 hmc457qs16g / 457qs16ge ingap hbt 1 watt power amplifier, 1.7 - 2.2 ghz v03.0907
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